硅加工中的表征 9787560342801 epub pdf mobi txt 电子书下载 2024

☆☆☆☆☆
简体网页||繁体网页

美布伦协尔等著

下载链接在页面底部

点击这里下载

facebook linkedin mastodon messenger pinterest reddit telegram twitter viber vkontakte whatsapp 复制链接

想要找书就要到静思书屋

book.tinynews.org

立刻按 ctrl+D收藏本页

你会得到大惊喜!!

发表于2024-04-28

商品介绍

店铺：韵读图书专营店

出版社：哈尔滨工业大学出版社

ISBN：9787560342801

商品编码：29757085723

包装：平装

出版时间：2014-01-01

硅加工中的表征 9787560342801 epub pdf mobi txt 电子书下载 2024

类似图书点击查看全场最低价

书籍描述

图书基本信息
图书名称	硅加工中的表征	作者	(美)布伦协尔等
定价	88.00元	出版社	哈尔滨工业大学出版社
ISBN	9787560342801	出版日期	2014-01-01
字数		页码
版次	1	装帧	平装
开本	16开	商品重量	0.4Kg

内容简介
《硅加工中的表征》是材料表征原版系列丛书之一。全书共分六章，内容包括：材料表征技术在硅外延生长中的应用；多晶硅导体；硅化物；铝和铜基导线；级钨基导体；阻隔性薄膜。本书适合作为相关领域的教学、研究、技术人员以及研究生和高年级本科生的参考书。

作者简介

Preface to the Reissue of the Materials Characterization Series
Preface to Series
Preface to the Reissue of Characterization in Silicon Processing
Preface
Contributors
APPLICATION OF MATERIALS CHARACTERIZATION TECHNIQUES TO SILICON EPITAXIAL GROWTH
1.1 Introduction
1.2 Silicon Epitaxial Growth
1.3 Film and Process Characterization
1.4 Selective Growth
1.5 Si1_xGex Epitaxial Growth
1.6 Si1_ xGex Material Characterization
1.7 Summary
POLYSILICON CONDUCTORS
2.1 Introduction
2.2 Deposition
2.3 Doping
2.4 Patterning
2.5 Subsequent Processing
SILICIDES
3.1 Introduction
3.2 Formation of Silicides
3.3 The Silicide-Silicon Interface
3.4 Oxidation of Silicides
3.5 Dopant Redistribution During Silicide Formation
3.6 Stress in Silicides
3.7 Stability of Silicides
3.8 Summary
ALUMINUM- AND COPPER-BASED CONDUCTORS
4.1 Introduction
4.2 Film Deposition
4.3 Film Growth
4.4 Encapsulation
4.5 Reliability Concerns
TUNGSTEN-BASED CONDUCTORS
5.1 Applications for ULSI Processing
5.2 Deposition Principles
5.3 Blanket Tungsten Deposition
5.4 Selective Tungsten Deposition
BARRIER FILMS
6.1 Introduction
6.2 Characteristics of Barrier Films
6.3 Types of Barrier Films
6.4 Processing Barrier Films
6.5 Examples of Barrier Films
6.6 Summary
APPENDIX: TECHNIQUE SUMMARIES
1 Auger Electron Spectroscopy (AES)
2 Ballistic Electron Emission Microscopy (BEEM)
3 Capacitance-Voltage (C-V) Measurements
4 Deep Level Transient Spectroscopy (DLTS)
5 Dynamic Secondary Ion Mass Spectrometry (Dynamic SIMS)
6 Electron Beam Induced Current (EBIC) Microscopy
7 Energy-Dispersive X-Ray Spectroscopy (EDS)
8 Focused Ion Beams (FIBs)
9 Fourier Transform Infrared Spectroscopy (FTIR)
10 Hall Effect Resistivity Measurements
11 Inductively Coupled Plasma Mass Spectrometry (ICPMS)
12 Light Microscopy
13 Low-Energy Electron Diffraction (LEED)
14 Neutron Activation Analysis (NAA)
15 Optical Scatterometry
16 Photoluminescence (PL)
17 Raman Spectroscopy
18 Reflection High-Energy Electron Diffraction (RHEED)
19 Rutherford Backscattering Spectrometry (RBS)
20 Scanning Electron Microscopy (SEM)
21 Scanning Transmission Electron Microscopy (STEM)
22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM)
23 Sheet Resistance and the Four Point Probe
24 Spreading Resistance Analysis (SRA)
25 Static Secondary Ion Mass Spectrometry (Static SIMS)
26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling
27 Total Reflection X-Ray Fluorescence Analysis (TXRF)
28 Transmission Electron Microscopy (TEM)
29 Variable-Angle Spectroscopic Ellipsometry (VASE)
30 X-Ray Diffraction (XRD)
31 X-Ray Fluorescence (XRF)
32 X-Ray Photoelectron Spectroscopy (XPS)
Index